features trenchfet gen ii power mosfet 100% r g tested applications high-side dc/dc conversion ? notebook ? desktop ? server notebook logic dc/dc, low-side si4346dy vishay siliconix new product document number: 72958 s-41793?rev. b, 04-oct-04 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) q g (typ) 0.023 @ v gs = 10 v 8 30 0.025 @ v gs = 4.5 v 7.5 65 30 0.030 @ v gs = 3.0 v 6.8 6 . 5 0.036 @ v gs = 2.5 v 6.0 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 ordering information: si4346dy?e3 si4346dy-t1?e3 ( with tape and reel) n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source v oltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 8 5.9 continuous drain current (t j = 150 c) a t a = 70 c i d 6.5 4.7 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 2.2 1.20 maximum power dissipation a t a = 25 c p d 2.5 1.31 w maximum power dissipation a t a = 70 c p d 1.6 0.84 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 43 50 maximum junction-to-ambient a steady state r thja 74 95 c/w maximum junction-to-foot (drain) steady state r thjf 22 27 c/w notes a. surface mounted on 1? x 1? fr4 board.
si4346dy vishay siliconix new product www.vishay.com 2 document number: 72958 s-41793?rev. b, 04-oct-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.7 2.0 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 8 a 0.019 0.023 drain - source on - state resistance a r ds(on) v gs = 4.5 v, i d = 7.5 a 0.021 0.025 drain - so u rce on - state resistance a r ds(on) v gs = 3.0 v, i d = 6.8 a 0.023 0.030 v gs = 2.5 v, i d = 6.0 a 0.027 0.036 forward t ransconductance a g fs v ds = 15 v, i d = 8 a 32 s diode forward voltage a v sd i s = 2.2 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g 6.5 10 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 8 a 2.3 nc gate-drain charge q gd ds gs d 1.1 gate resistance r g 0.25 0.5 0.75 turn-on delay time t d(on) 9 15 rise time t r v dd = 15 v, r l = 15 11 17 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 40 60 ns fall time t f g 7 11 source-drain reverse recovery time t rr i f = 2.2 a, di/dt = 100 a/ s 20 35 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 012345 v gs = 10 thru 3 v t c = 125 c ? 55 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 2 v
si4346dy vishay siliconix new product document number: 72958 s-41793?rev. b, 04-oct-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0.0 0.3 0.6 0.9 1.2 1.5 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 ? on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0123456789 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 5 10 15 20 25 30 v ds ? drain-to-source voltage (v) c rss v ds = 15 v i d = 8 a i d ? drain current (a) v gs = 10 v i d = 8 a gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) 0.00 0.01 0.02 0.03 0.04 0.05 0246810 t j = 25 c i d = 8 a 40 10 0.1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v t j = 150 c v gs = 10 v c oss c iss 1 r ds(on) ? on-resiistance (normalized)
si4346dy vishay siliconix new product www.vishay.com 4 document number: 72958 s-41793?rev. b, 04-oct-04 typical characteristics (25 c unless noted) ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) 0 60 100 20 40 power (w) single pulse power, junction-to-ambient time (sec) 80 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 71 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 110 10 ? 1 10 ? 3 safe operating area 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse ? drain current (a) i d 0.1 i dm limited i d(on) limited r ds(on) limited* bv dss limited 1 s 10 ms 100 ms dc 10 s 1 ms 10 ? 2 v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified
si4346dy vishay siliconix new product document number: 72958 s-41793?rev. b, 04-oct-04 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effecti ve transient thermal impedance vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locati ons. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72958 .
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